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IS31AP2010B integrated silicon solution, inc. ? www.issi.com rev. a, 06/24/2011 1 3w@5.0v mono filter-less, class-d audio power amplifier general description the IS31AP2010B is a high efficiency, 3w@5.0v mono filter-less class-d audio power amplifier. a low noise, filter-less pwm architecture eliminates the output filter, reduces external component count, system cost, and simplifying design. operating in a single 5.0v supply, IS31AP2010B is capable of driving 4 ? speaker load at a continuous average output of 3w@10% thd+n. the IS31AP2010B has high efficiency with speaker load compared to a typical class- ab amplifier. in cellular handsets, the earpiece, speaker phone, and melody ringer speaker can each be driven by the IS31AP2010B. the gain of IS31AP2010B is externally configurable which allows independent gain control from multiple sources by summing signals from each function. IS31AP2010B is available in utqfn-9 packages . it operates from 2.7v to 5.5v over the temperature range of - 40c to +85c. features ? 5.0v supply at thd+n = 10% ? D 3w into 4 ? (typ.) ? D 1.68w into 8 ? (typ.) ? efficiency at 5.0v ? D 85% at 400mw with a 4 ? speaker ? D 88% at 400mw with a 8 ? speaker ? less than 1 a shutdown current ? optimized pwm output stage eliminates lc output filter ? fully differential design reduces rf rectification and eliminates bypass capacitor ? i mproved cmrr eliminates two input coupling capacitors ? integrated click-and-pop suppression circuitry ? utqfn-9 package ? rohs compliant and 100% lead(pb)-free applications ? wireless or cellular handsets and pdas ? portable dvd player ? notebook pc ? portable radio ? educational toys ? portable gaming typical application circuit figure 1 typical application circuit ? copyright ? ? ? 2011 ? integrated ? silicon ? solution, ? inc. ? all ? rights ? reserved. ? issi ? reserves ? the ? right ? to ? make ? changes ? to ? this ? specification ? and ? its ? products ? at ? any ? time ? without ? notice. ? issi ? assumes ? no ? liability ? arising ? out ? of ? the ? application ? or ? use ? of ? any ? information, ? products ? or ? services ? described ? herein. ? customers ? are ? advised ? to ? obtain ? the ? latest ? version ? of ? this ? device ? specification ? before ? relying ? on ? any ? published ? information ? and ? before ? placing ? orders ? for ? products. ? integrated ? silicon ? solution, ? inc. ? does ? not ? recommend ? the ? use ? of ? any ? of ? its ? products ? in ? life ? support ? applications ? where ? the ? failure ? or ? malfunction ? of ? the ? product ? can ? reasonably ? be ? expected ? to ? cause ? failure ? of ? the ? life ? support ? system ? or ? to ? significantly ? affect ? its ? safety ? or ? effectiveness. ? products ? are ? not ? authorized ? for ? use ? in ? such ? applications ? unless ? integrated ? silicon ? solution, ? inc. ? receives ? written ? assurance ? to ? its ? satisfaction, ? that: ? a.) ? the ? risk ? of ? injury ? or ? damage ? has ? been ? minimized; ? b.) ? the ? user ? assume ? all ? such ? risks; ? and ? c.) ? potential ? liability ? of ? integrated ? silicon ? solution, ? inc ? is ? adequately ? protected ? under ? the ? circumstances august 2011
IS31AP2010B integrated silicon solution, inc. ? www.issi.com rev. a, 06/24/2011 2 pin configuration package pin configuration (top view) utqfn-9 a1 a2 a3 b1 b2 b3 c1 c2 c3 in+ gnd out- vdd vdd gnd in- sdb out+ pin description no. pin i/o description a1 in+ i positive audio input. a2, b3 gnd - connect to ground. a3 out - o negative audio output. b1, b2 vdd - power supply. c1 in - i negative audio input. c2 sdb i enter in shutdown mode when active low. c3 out+ o positive audio output. ordering information industrial range: -40 c to +85 c order part no. package qty/reel IS31AP2010B-utls2-tr utqfn-9, lead-free 3000
IS31AP2010B integrated silicon solution, inc. ? www.issi.com rev. a, 06/24/2011 3 absolute maximum ratings (note 1) supply voltage, v dd - 0.3v ~ +5.5v voltage at any input pin - 0.3v ~ v dd +0.3v junction temperature, t jmax - 40c ~ +150c storage temperature rang, t stg - 65c ~ +150c lead temperature 1.6mm(1/16 inch) from case for 10s - 260c thermal resistance ja (utqfn) 70c/w esd (hbm) 6kv electrical characteristics v dd = 2.7v ~ 5.5v, t a = 25c , unless otherwise noted. (note 2) symbol parameter condition min. typ. max. unit v dd supply voltage 2.7 5.5 v | v os | output offset voltage (measured differentially) v sdb = 0v, a v = 2v/v 10 mv i dd quiescent current v dd = 5.5v, no load 2.6 ma v dd = 2.7v, no load 1.2 i sd shutdown current v sdb = 0.4v 1 a f sw switching frequency 250 khz r in input resistor gain ? ? gain r in = 150k ? 2 v/v v ih high-level input voltage 1.4 v dd v v il low-level input voltage 0 0.4 v
IS31AP2010B integrated silicon solution, inc. ? www.issi.com rev. a, 06/24/2011 4 electrical characteristics t a = 25c, gain = 2v/v, c in = 2 f, unless otherwise noted. (note 3) symbol parameter condition min. typ. max. unit p o output power thd+n = 10% f = 1khz, r l = 8 ? v dd = 5.0v 1.68 w v dd = 4.2v 1.2 v dd = 3.6v 0.88 thd+n = 10% f = 1khz, r l = 4 ? v dd = 5.0v 3.0 w v dd = 4.2v 2.0 v dd = 3.6v 1.5 thd+n = 1% f = 1khz, r l = 8 ? v dd = 5.0v 1.4 w v dd = 4.2v 1.0 v dd = 3.6v 0.7 thd+n = 1% f = 1khz, r l = 4 ? v dd = 5.0v 2.4 w v dd = 4.2v 1.68 v dd = 3.6v 1.2 thd+n total harmonic distortion plus noise v dd = 4.2v, p o = 0.6w, r l = 8 ? , f = 1khz 0.18 % v dd = 4.2v, p o = 1.1w, r l = 4 ? , f = 1khz 0.22 v no output voltage noise v dd = 4.2v, f = 20hz to 20khz inputs ac-grounded 80 vrms t wu wake-up time from shutdown v dd = 3.6v 32 ms snr signal-to-noise ratio p o = 1.0w, r l = 8 ? , v dd = 4.2v 91 db psrr power supply rejection ratio f = 217hz r l = 8 ? input grounded v dd = 5.0v - 75 db v dd = 4.2v - 70 v dd = 3.6v - 66 note: 1. stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating cond itions is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2. all parts are production tested at t a = 25c. other temperature limits are guaranteed by design. 3. guaranteed by design.
IS31AP2010B integrated silicon solution, inc. ? www.issi.com rev. a, 06/24/2011 5 typical performance characteristic output power(w) thd+n(%) 20 10 5 2 1 0.5 0.2 0.1 10m 20m 50m 100m 500m 1 2 3 r l = 8 ? f= 1khz v dd = 3.6v v dd = 4.2v v dd = 5.0v figure 2 thd+n vs. output power frequency(hz) thd+n(%) 0.05 10 5 2 1 0.5 0.2 0.1 20 50 100 200 500 1k 2k 5k 20k 0.02 0.01 r l = 8 ? v dd =3.6v po = 0.45w v dd = 5.0v po = 0.9w v dd = 4.2v po = 0.6w figure 4 thd+n vs. frequency frequency(hz) psrr(db) 20 50 100 200 500 1k 2k 5k 20k +0 -100 -80 -60 -40 -20 r l = 8 ? input grouded v dd = 3.6v v dd = 4.2v v dd = 5.0v figure 6 psrr vs. frequency output power(w) thd+n(%) 20 10 5 2 1 0.5 0.2 0.1 10m 20m 50m 100m 500m 12 3 r l = 4 ? f = 1khz 4 v dd = 3.6v v dd = 4.2v v dd = 5.0v figure 3 thd+n vs. output powe r frequency(hz) thd+n(%) 0.05 10 5 2 1 0.5 0.2 0.1 20 50 100 200 500 1k 2k 5k 20k 0.02 0.01 r l = 4 ? v dd =3.6v po = 0.8w v dd = 4.2v po = 1.1w v dd = 5.0v po = 1.5w figure 5 thd+n vs. frequency frequency(hz) psrr(db) 20 50 100 200 500 1k 2k 5k 20k -120 +0 -100 -80 -60 -40 -20 r l = 4 ? input grouded v dd = 4.2v v dd = 5.0v v dd = 3.6v figure 7 psrr vs. frequency
IS31AP2010B integrated silicon solution, inc. ? www.issi.com rev. a, 06/24/2011 6 frequency(hz) output v oltage(uv) 20 50 100 200 500 1k 2k 5k 20k 10 200 20 30 50 70 100 v dd = 3.6v~5.0v r l = 4 ? , 8 ? figure 8 noise output power(w) efficiency(%) 100 80 60 40 20 0 0 0.3 0.6 0.9 1.2 1.5 v dd = 5.0v r l =8 ? r l =4 ? figure 9 efficiency
IS31AP2010B integrated silicon solution, inc. ? www.issi.com rev. a, 06/24/2011 7 application information fully differential amplifier the IS31AP2010B is a fully differential amplifier with differential inputs and outputs. the fully differential amplifier consists of a differential amplifier and a common mode amplifier. the differential amplifier ensures that the amplifier outputs a differential voltage on the output that is equal to the differential input times the gain. the common-mode feedback ensures that the common-mode voltage at the output is biased around v dd /2 regardless of the common-mode voltage at the input. the fully differential IS31AP2010B can still be used with a single-end ed input; however, the IS31AP2010B should be used with differential inputs when in a noisy environment, like a wireless handset, to ensure maximum noise rejection. advantages of fully differential amplifiers the fully differential amplifier does not require a bypass capacitor. this is because any shift in the mid-supply affects both positive and negative channels equally and cancels at the differential output. gsm handsets save power by turning on and shutting off the rf transmitter at a rate of 217hz. the transmitted signal is picked-up on input and output traces. the fully differential amplifier cancels the signal much better than the typical audio amplifier. component selection figure 10 shows the IS31AP2010B with differential inputs and input capacitors, and figure 11 shows the IS31AP2010B with single-ended inputs. differential inputs should be used whenever possible because the single-ended inputs are much more susceptible to noise. figure 10 differential input bias circuitry pwm h-bridge c in 0.1 f c in 0.1 f r in 150k r in 150k cs 1 f gnd internal oscillator single-ended input sdb out+ out- in- in+ vdd c1 a1 b1 c3 a3 a2, b3 c2 300k b2 v battery shutdown control 100k figure 11 single-ended input input resistors (r in ) the input resistors (r in ) set the gain of the amplifier according to equation (1). in f r r ain ? ? 2 g ? ? ? ? ? ? v v (1) resistor matching is very important in fully differential amplifiers. the balance of the output on the reference voltage depends on matched ratios of the resistors. cmrr, psrr, and cancellation of the second harmonic distortion diminish if resistor mismatch occurs. therefore, it is recommended to use 1% tolerance resistors or better to keep the performance optimized. matching is more important than overall tolerance. resistor arrays with 1% matching can be used with a tolerance greater than 1%. place the input resistors very close to the IS31AP2010B to limit noise injection on the high-impedance nodes. for optimal performance the gain should be set to 2v/v or lower. lower gain allows the IS31AP2010B to operate at its best, and keeps a high voltage at the input making the inputs less susceptible to noise. decoupling capacitor (c s ) the IS31AP2010B is a high performance class-d audio amplifier that requires adequate power supply decoupling to ensure the efficiency is high and total harmonic distortion (thd) is low. for higher frequency transients, spikes, or digital hash on the line, a good low equivalent-series-resistance (esr) ceramic capacitor, typically 1 f, placed as close as possible to the device vdd lead works best. placing this decoupling capacitor close to the IS31AP2010B is very important for the efficiency of the class-d amplifier, because any resistance or inductance in the trace between the device and the capacitor can cause a loss in efficiency. for filtering lower frequency noise signals, a 10 f or greater capacitor placed near the audio power amplifier would also help, but it is not required in most applications because of the high psrr of this device
IS31AP2010B integrated silicon solution, inc. ? www.issi.com rev. a, 06/24/2011 8 input capacitors (c in ) the input capacitors and input resistors form a high pass filter with the corner frequency, f c , determined in equation (2). ?? in in c r c f ? 2 1 ? (2) the value of the input capacitor is important to consider as it directly affects the bass (low frequency) performance of the circuit. speakers in wireless phones cannot usually respond well to low frequencies, so the corner frequency can be set to block low frequencies in this application. equation (3) is reconfigured to solve for the input coupling capacitance. ?? c in in f r c ? 2 1 ? (3) if the corner frequency is within the audio band, the capacitors should have a tolerance of 10% or better, because any mismatch in capacitance causes an impedance mismatch at the corner frequency and below. for a flat low frequency response, use large input coupling capacitors (1 f). however, in a gsm phone the ground signal is fluctuating at 217hz, but the signal from the codec does not have the same 217hz fluctuation. the difference between the two signals is amplified, sent to the speaker, and heard as a 217hz hum. summing input signals most wireless phones or pdas need to sum signals at the audio power amplifier or just have two signal sources that need separate gain. the IS31AP2010B makes it easy to sum signals or use separate signal sources with different gains. many phones now use the same speaker for the earpiece and ringer, where the wireless phone would require a much lower gain for the phone earpiece than for the ringer. pdas and phones that have stereo headphones require summing of the right and left channels to output the stereo signal to the mono speaker. summing two differential input signals two extra resistors are needed for summing differential signals (a total of 5 components). the gain for each input source can be set independently (see equations (4) and (5) and figure 12). 1 1 2 1 in f i o r r gain v v ? ? ? ? ? ? ? ? ? v v (4) 2 2 2 2 in f i o r r gain v v ? ? ? ? ? ? ? ? ? v v (5) if summing left and right inputs with a gain of 1v/v, use r in1 = r in2 = 300k ? . if summing a ring tone and a phone signal, set the ring-tone gain to gain2 = 2v/v, and the phone gain to gain1 = 0.1v/v. the resistor values would be r in1 = 3m ? , r in2 = 150k ? bias circuitry pwm h-bridge c in1 0.1 f c in1 0.1 f r in1 150k r in1 150k cs 1 f gnd internal oscillator sdb out+ out- in- in+ vdd c1 a1 b1 c3 a3 a2, b3 c2 300k b2 v battery shutdown control c in2 0.1 f c in2 0.1 f r in2 150k r in2 150k differential input 1 differential input 2 figure 12 summing two differential inputs summing a differential input signal and a single-ended input signal figure 13 shows how to sum a differential input signal and a single-ended input signal. ground noise may couple in through in - with this method. it is better to use differential inputs. the corner frequency of the single-ended input is set by c in2 , shown in equation (8). to assure that each input is balanced, the single-ended input must be driven by a low-impedance source even if the input is not in use. 1 1 2 1 in f i o r r gain v v ? ? ? ? ? ? ? ? ? v v (6) 2 2 2 2 in f i o r r gain v v ? ? ? ? ? ? ? ? ? v v (7) ?? 2 2 2 2 1 c in in f r c ? ? (8) if summing a ring tone and a phone signal, the phone signal should use a differential input signal while the ring tone might be limited to a single-ended signal. phone gain is set at gain1 = 0.1v/v, and the ring-tone gain is set to gain2 = 2v/v, the resistor values would be r in1 = 3m ? , r in2 = 150k ? the high pass corner frequency of the single-ended input is set by c in2 . if the desired corner frequency is less than 20hz. ?? hz k in c 20 150 2 1 2 ? ? ? ? (9) pf c in 53 2 ? (10)
IS31AP2010B integrated silicon solution, inc. ? www.issi.com rev. a, 06/24/2011 9 figure 13 summing differential input and single-ended input signals summing two single-ended input signals the gain and corner frequencies (f c1 and f c2 ) for each input source can be set independently (see equations (11) through (14) and figure 14). resistor, r p , and capacitor, c p , are needed on the in - terminal to match the impedance on the in+ terminal. the single-ended inputs must be driven by low impedance sources even if one of the inputs is not outputting an ac signal. 1 1 2 1 in f i o r r gain v v ? ? ? ? ? ? ? ? ? v v (11) 2 2 2 2 in f i o r r gain v v ? ? ? ? ? ? ? ? ? v v (12) ?? 1 1 1 2 1 c in in f r c ? ? (13) ?? 2 2 2 2 1 c in in f r c ? ? (14) 2 1 in in p c c c ? ? (15) ?? 2 1 2 1 in in in in p r r r r r ? ? ? (16) figure 14 summing two single-ended inputs emi evaluation result 30 100 1000 1000 mhz 0 10 20 30 40 50 60 70 80 dbuv/m re_b figure 15 emi evaluation result
IS31AP2010B integrated silicon solution, inc. ? www.issi.com rev. a, 06/24/2011 10 classification reflow profiles profile feature pb-free assembly preheat & soak temperature min (tsmin) temperature max (tsmax) time (tsmin to tsmax) (ts) 150c 200c 60-120 seconds average ramp-up rate (tsmax to tp) 3c/second max. liquidous temperature (tl) time at liquidous (tl) 217c 60-150 seconds peak package body temperature (tp)* max 260c time (tp)** within 5c of the specified classification temperature (tc) max 30 seconds average ramp-down rate (tp to tsmax) 6c/second max. time 25c to peak temperature 8 minutes max. figure 16 classification profile
IS31AP2010B integrated silicon solution, inc. ? www.issi.com rev. a, 06/24/2011 11 tape and reel information note: all dimensions in millimeters unless otherwise stated.
IS31AP2010B integrated silicon solution, inc. ? www.issi.com rev. a, 06/24/2011 12 packaging information utqfn-9 note: all dimensions in millimeters unless otherwise stated.

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